InGaN solar cells with regrown GaN homojunction tunnel contacts
The cell structure consists of a 1.0 µm n-GaN (Si ≈ 1 × 10 17 cm −3) buffer layer, a 4.5 µm n-GaN (Si ≈ 6 × 10 18 cm −3) n-contact layer, followed by the MQW region composed of a 20-period InGaN (3.0 nm)/GaN (5.6 nm) MQW structure with an In mole fraction of ∼13.7%, determined by X-ray diffraction (XRD), and a photoluminescence peak emission line